AOK9N90
MOSFET N-CH 900V 9A TO247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Alpha & Omega Semiconductor Inc. AOK9N90 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a maximum Drain-to-Source Voltage (Vdss) of 900 V and a continuous Drain Current (Id) of 9 A at 25°C (Tc). With a maximum Power Dissipation of 368 W (Tc) and a low On-Resistance (Rds On) of 1.3 Ohms at 4.5 A and 10 V drive, it is suitable for demanding power conversion circuits. Key electrical characteristics include a Gate Charge (Qg) of 58 nC (Max) at 10 V and Input Capacitance (Ciss) of 2560 pF (Max) at 25 V. The MOSFET is packaged in a TO-247-3 through-hole configuration and operates across a wide temperature range of -55°C to 150°C (TJ). This component is commonly utilized in industrial power supplies, lighting, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 368W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 25 V |
Request a Quote
Clients Also Buy
AONS520A70
N
AONV110A60
N
AOK065A60FD
LINEAR IC
