AOK8N80L
MOSFET N-CH 800V 7.4A TO247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. presents the AOK8N80L, an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 7.4A at 25°C, with a maximum power dissipation of 245W (Tc). The device exhibits a low On-Resistance (Rds On) of 1.63 Ohm at 4A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 32 nC and Input Capacitance (Ciss) of 1650 pF. The AOK8N80L is packaged in a TO-247-3 through-hole configuration, suitable for demanding power supply designs, industrial automation, and renewable energy systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.63Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 245W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
Request a Quote
Clients Also Buy
AO4266
MOSFET N-CH 60V 10A 8SO
AONV070V65G1
GAN
AOL1432
MOSFET N-CH 25V 12A/44A ULTRASO8
