AOK8N80
MOSFET N-CH 800V 7.4A TO247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. MOSFET, N-Channel, AOK8N80. This TO-247-3 packaged device features an 800 V drain-to-source voltage (Vdss) and a continuous drain current of 7.4 A at 25°C. The AOK8N80 offers a maximum on-resistance (Rds On) of 1.63 Ohms at 4 A and 10 V gate-source voltage. Key parameters include a 32 nC gate charge (Qg) and 1650 pF input capacitance (Ciss). With a maximum power dissipation of 245 W at 25°C and an operating temperature range of -55°C to 150°C, this component is suitable for high-voltage power applications across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.63Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 245W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V |
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