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AOK66613

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AOK66613

MOSFET N-CH 60V 58.5A/120A TO247

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AOK66613, an N-Channel AlphaSGT™ MOSFET. This component features a 60V drain-source voltage (Vdss) and supports continuous drain current ratings of 58.5A at ambient temperature (Ta) and 120A at case temperature (Tc). The device offers a maximum on-resistance (Rds On) of 2.5mOhm at 20A and 10V gate-source voltage (Vgs). Maximum power dissipation is specified as 15.6W (Ta) and 312W (Tc). Key electrical characteristics include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 5300 pF at 30V. The AOK66613 is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 175°C. This MOSFET is suitable for applications in automotive and industrial power systems.

Additional Information

Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C58.5A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)15.6W (Ta), 312W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 30 V

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