AOK60N30L
MOSFET N-CH 300V 60A TO247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOK60N30L, offers a 300V drain-source breakdown voltage and 60A continuous drain current at 25°C. This TO-247-3 packaged device features a low Rds(on) of 56mOhm at 30A and 10V Vgs, facilitating efficient power switching. With a maximum power dissipation of 658W at 25°C (Tc) and a gate charge of 106 nC at 10V, it is suitable for high-power applications. The input capacitance (Ciss) is rated at 5330 pF maximum at 25V. This component is commonly utilized in power supply designs, motor control, and industrial power conversion systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 658W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5330 pF @ 25 V |
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