AOK5N100L
MOSFET N-CH 1000V 4A TO247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOK5N100L. This device features a drain-source voltage (Vdss) of 1000V and a continuous drain current (Id) of 4A at 25°C. The Rds On is specified at a maximum of 4.2 Ohms with a gate-source voltage (Vgs) of 10V and a drain current (Id) of 2.5A. Key parameters include a gate charge (Qg) of 23nC @ 10V and input capacitance (Ciss) of 1150pF @ 25V. The TO-247 package offers a maximum power dissipation of 195W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications requiring high voltage switching, such as power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 195W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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