AOK42S60L
MOSFET N-CH 600V 39A TO247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ N-Channel MOSFET, part number AOK42S60L, offers a 600V drain-source breakdown voltage and a continuous drain current of 39A at 25°C (Tc). This device features a maximum on-resistance of 99mOhm at 21A and 10V gate-source voltage. With a low gate charge of 40 nC at 10V and input capacitance of 2154 pF at 100V, it is suitable for high-frequency applications. The AOK42S60L is housed in a TO-247-3 through-hole package, allowing for efficient heat dissipation with a maximum power dissipation of 417W (Tc). Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply designs, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2154 pF @ 100 V |
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