AOK29S50L
MOSFET N-CH 500V 29A TO247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS™ series AOK29S50L is a high-performance N-Channel MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 29A at 25°C (Tc). With a maximum power dissipation of 357W (Tc) and a low on-resistance (Rds On) of 150mOhm at 14.5A and 10V gate drive, it ensures efficient power handling. The TO-247-3 package offers robust thermal performance. Key parameters include a gate charge (Qg) of 26.6 nC at 10V and input capacitance (Ciss) of 1312 pF at 100V. This MOSFET is suitable for industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1312 pF @ 100 V |
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