AOK18N65L
MOSFET N-CH 650V 18A TO247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOK18N65L is an N-Channel Power MOSFET designed for high voltage applications. This device features a 650V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C, with a maximum power dissipation of 417W (Tc). The AOK18N65L has a low on-resistance (Rds On) of 390mOhm at 9A and 10V gate drive, and a gate charge (Qg) of 68nC at 10V. Its input capacitance (Ciss) is 3785pF at 25V. Packaged in a TO-247-3 through-hole configuration, this MOSFET operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for use in power supply, lighting, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3785 pF @ 25 V |
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