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AOK160A60

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AOK160A60

MOSFET N-CH 600V 24A TO247

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. aMOS5™ N-Channel MOSFET, part number AOK160A60, offers a 600V drain-source breakdown voltage and a continuous drain current of 24A at 25°C (Tc). This through-hole component is housed in a TO-247-3 package and features a maximum power dissipation of 250W (Tc). Key electrical characteristics include a 160mOhm maximum on-resistance at 12A and 10V Vgs, and a typical gate charge of 46 nC at 10V. Input capacitance (Ciss) is specified at 2340 pF maximum at 100V. The AOK160A60 is suitable for applications requiring high voltage and current handling, commonly found in power supplies, industrial motor control, and renewable energy systems. It operates within a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage tolerance of ±20V.

Additional Information

Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Tc)
Rds On (Max) @ Id, Vgs160mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)250W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2340 pF @ 100 V

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