AOK150V120X2
1200V SILICON CARBIDE MOSFETManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 1200 V 20A (Tc) 115W (Tj) Through Hole TO-247
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 3.9A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tj) |
| Vgs(th) (Max) @ Id | 3.6V @ 3.9mA |
| Supplier Device Package | TO-247 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +15V, -5V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 28.3 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 664 pF @ 800 V |
| Qualification | - |
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