AOK10N90
MOSFET N-CH 900V 10A TO247Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOK10N90. This TO-247 packaged device features a 900 V drain-source breakdown voltage and a continuous drain current rating of 10 A at 25°C (Tc). With a maximum power dissipation of 403 W (Tc) and a low on-resistance of 980 mOhm at 5 A and 10 V, the AOK10N90 is suitable for high-voltage, high-efficiency applications. Key parameters include a gate charge of 75 nC (max) at 10 V and input capacitance of 3160 pF (max) at 25 V. Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 980mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 403W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3160 pF @ 25 V |
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