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AOK042A60FD

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AOK042A60FD

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Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

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Alpha & Omega Semiconductor Inc. aMOS5™ N-Channel MOSFET, part number AOK042A60FD, is a high-performance power device designed for demanding applications. This through-hole TO-247-3 packaged component features a 600 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 70 A at 25°C (Tc), with a maximum power dissipation of 500 W (Tc). The AOK042A60FD exhibits a low on-resistance (Rds On) of 42 mOhm at 25 A and 10 V (Vgs), facilitated by its advanced MOSFET technology. Key parameters include a gate charge (Qg) of 175 nC at 10 V and an input capacitance (Ciss) of 9165 pF at 100 V (Vds). This device is suitable for various industrial sectors including power supplies, motor control, and renewable energy systems. It operates reliably across a wide temperature range from -55°C to 150°C (TJ).

Additional Information

Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs42mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id4.2V @ 250µA
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9165 pF @ 100 V

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