AOI9N50
MOSFET N-CH 500V 9A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOI9N50 is a 500V N-Channel MOSFET designed for power switching applications. This through-hole component, packaged in a TO-251A (IPAK) configuration, offers a continuous drain current of 9A (Tc) and a maximum power dissipation of 178W (Tc). Key electrical characteristics include a maximum Rds On of 860mOhm at 4.5A and 10V, a gate charge (Qg) of 24 nC @ 10 V, and input capacitance (Ciss) of 1160 pF @ 25 V. The device operates over a temperature range of -50°C to 150°C (TJ) with a Vgs(th) of 4.5V @ 250µA and a maximum Vgs of ±30V. This MOSFET is commonly utilized in power supply designs, motor control, and other high-voltage switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 860mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
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