AOI7S65
MOSFET N-CH 650V 7A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ N-Channel MOSFET, part number AOI7S65, offers a 650V drain-source voltage and 7A continuous drain current at 25°C. This TO-251A packaged device features a maximum power dissipation of 89W (Tc) and a typical Rds(On) of 650mOhm at 3.5A and 10V gate drive. Key parameters include a gate charge of 9.2 nC and input capacitance of 434 pF at 100V. Designed for through-hole mounting, it operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power supply units and industrial control systems.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 434 pF @ 100 V |
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