AOI7N65
MOSFET N-CH 650V 7A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI7N65 is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 7A at 25°C. With a maximum power dissipation of 178W (Tc), it is suitable for demanding power management tasks. The Rds On is specified at 1.56 Ohms maximum at 3.5A and 10V Vgs. Key parameters include a gate charge (Qg) of 24 nC at 10V and input capacitance (Ciss) of 1180 pF at 25V. The AOI7N65 utilizes advanced MOSFET technology and is packaged in a TO-251A (IPAK) through-hole configuration, making it ideal for use in power supplies, lighting, and industrial motor control applications. It operates within a temperature range of -50°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.56Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
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