AOI7N60
MOSFET N-CH 600V 7A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. MOSFET, AOI7N60. This N-Channel MOSFET features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 7A at 25°C. The AOI7N60 offers a maximum On-Resistance (Rds On) of 1.3 Ohm at 3.5A and 10V gate drive. With a power dissipation of 178W (Tc) and a gate charge of 24 nC at 10V, this device is suitable for high-voltage switching applications. The TO-251A package with through-hole mounting facilitates integration into power supply designs, industrial automation, and lighting control systems. It operates within a temperature range of -50°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1170 pF @ 25 V |
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