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AOI530

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AOI530

MOSFET N-CH 30V 23A/70A TO251A

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOI530 is an N-Channel AlphaMOS series power MOSFET. This component features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current (Id) of 23A at 25°C ambient and 70A at 25°C case temperature. The AOI530 exhibits a low on-resistance (Rds On) of 2.7mOhm at 20A and 10V Vgs. With a maximum power dissipation of 2.5W (Ta) and 83W (Tc), it is suitable for applications requiring efficient power switching. Key parameters include a gate charge (Qg) of 62nC at 10V and input capacitance (Ciss) of 3130pF at 15V. The device operates within a junction temperature range of -55°C to 175°C and is housed in a TO-251A package, commonly known as IPAK, for through-hole mounting. This component finds application in automotive and industrial power management systems.

Additional Information

Series: AlphaMOSRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs2.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device PackageTO-251A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3130 pF @ 15 V

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