AOI518
MOSFET N-CH 30V 18A/46A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, AOI518. This TO-251A packaged device features a 30V drain-source voltage and a continuous drain current of 18A at 25°C ambient and 46A at 25°C case temperature. The AOI518 offers a low on-resistance of 8mOhm maximum at 20A and 10V gate drive. Gate charge is specified at 22.5 nC maximum at 10V, with input capacitance (Ciss) at 951 pF maximum at 15V. Maximum power dissipation is 2.5W ambient and 50W case, with an operating junction temperature range of -55°C to 175°C. This component is suitable for applications in power management and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 951 pF @ 15 V |
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