AOI516
MOSFET N-CH 30V 18A/46A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI516 is an N-Channel MOSFET designed for efficient power switching. This device features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 18A at 25°C ambient temperature and 46A at 25°C case temperature. The AOI516 exhibits a low on-resistance (Rds On) of 5mOhm maximum at 20A and 10V gate-source voltage.
With a maximum power dissipation of 2.5W (Ta) and 50W (Tc), this MOSFET operates effectively across a wide temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 33 nC maximum at 10V and an input capacitance (Ciss) of 1229 pF maximum at 15V. The AOI516 is housed in a TO-251A (IPAK) package, suitable for through-hole mounting. It is commonly utilized in power management, automotive, and industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1229 pF @ 15 V |
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