AOI514
MOSFET N-CH 30V 17A/46A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI514 is an N-Channel MOSFET designed for high-efficiency power switching. This device features a 30V drain-source voltage (Vdss) and supports continuous drain currents of 17A at ambient temperature (Ta) and 46A at case temperature (Tc). The AOI514 offers a low on-resistance (Rds On) of 5.9mOhm at 20A and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 2.5W (Ta) and 50W (Tc), it is suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 18 nC at 10V Vgs and an input capacitance (Ciss) of 1187 pF at 15V Vds. The threshold voltage (Vgs(th)) is a maximum of 2.4V at 250µA, with a gate-source voltage (Vgs) range of ±20V. The AOI514 is housed in a TO-251A (IPAK) package with through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1187 pF @ 15 V |
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