AOI510
MOSFET N-CH 30V 45A/70A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI510 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 45A at ambient temperature and 70A at case temperature. The device exhibits a low on-resistance (Rds On) of 2.6mOhm at 20A and 10V, contributing to reduced conduction losses. With a gate charge (Qg) of 60 nC at 10V and input capacitance (Ciss) of 2719 pF at 15V, it is optimized for fast switching speeds. The AOI510 supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.2V at 250µA. It is housed in a TO-251A package and supports through-hole mounting. Thermal management is facilitated by its power dissipation capabilities of 7.5W (Ta) and 60W (Tc). This MOSFET is commonly utilized in automotive, industrial, and consumer electronics power management systems. The part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.5W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2719 pF @ 15 V |
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