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AOI508

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AOI508

MOSFET N-CH 30V 22A/70A TO251A

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOI508 is an N-Channel power MOSFET designed for efficient power switching applications. This component features a 30V drain-source breakdown voltage (Vdss) and offers a continuous drain current capability of 22A at ambient temperature (Ta) and 70A at case temperature (Tc). The device exhibits a low on-resistance (Rds On) of 3mOhm maximum at 20A and 10V Vgs. With a gate charge (Qg) of 49 nC maximum at 10V Vgs and input capacitance (Ciss) of 2010 pF maximum at 15V Vds, it is suitable for high-frequency switching. The AOI508 supports a gate-source voltage range of ±20V and operates within an extended temperature range of -55°C to 175°C (TJ). Power dissipation is rated at 2.5W (Ta) and 50W (Tc). The TO-251A package with through-hole mounting is utilized, providing robust thermal performance. This MOSFET finds application in various industrial sectors, including power supplies, automotive electronics, and motor control.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device PackageTO-251A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2010 pF @ 15 V

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