AOI4T60
MOSFET N-CH 600V 4A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOI4T60 is an N-Channel MOSFET designed for power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 4A at 25°C. The AOI4T60 offers a maximum On-Resistance (Rds On) of 2.1 Ohm at 1A and 10V gate drive. With a maximum power dissipation of 83W (Tc), it is housed in a TO-251A (IPAK) package for through-hole mounting. Key parameters include a gate charge (Qg) of 15 nC and input capacitance (Ciss) of 460 pF at specified test conditions. This component is suitable for use in industrial and consumer electronics where high voltage switching is required. The operating temperature range is from -50°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 100 V |
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