AOI4S60
MOSFET N-CH 600V 4A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET, part number AOI4S60. This component features a 600 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C. The device offers a maximum on-resistance (Rds On) of 900mOhm at 2A and 10V gate-source voltage. Key parameters include input capacitance (Ciss) of 263 pF at 100 V and gate charge (Qg) of 6 nC at 10 V. The AOI4S60 is housed in a TO-251A (IPAK) package with through-hole mounting. Maximum power dissipation is 56.8W at 25°C (Tc). This MOSFET is suitable for applications in power supply, lighting, and industrial automation.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 263 pF @ 100 V |
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