AOI4C60
MOSFET N-CH 600V 4A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI4C60 is an N-Channel MOSFET designed for power switching applications. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C (Tc). The AOI4C60 offers a maximum on-resistance (Rds On) of 950mOhm at 1.3A and 10V Vgs. Its through-hole TO-251A (IPAK) package facilitates easy mounting and thermal management, with a maximum power dissipation of 125W (Tc). Key parameters include a gate charge (Qg) of 18 nC at 10V and an input capacitance (Ciss) of 910 pF at 100V. This MOSFET operates within a temperature range of -50°C to 150°C and is suitable for use in industrial, power supply, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 100 V |
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