AOI482
MOSFET N-CH 100V 5A/32A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI482 is an N-Channel MOSFET designed for power switching applications. This device features a Drain-Source Voltage (Vds) of 100V and continuous drain current capabilities of 5A at ambient temperature (Ta) and 32A at case temperature (Tc). With a maximum power dissipation of 2.5W (Ta) and 100W (Tc), the AOI482 offers a low on-resistance (Rds On) of 37mOhm at 10A and 10V. The MOSFET utilizes Metal Oxide technology and is housed in a TO-251A package with through-hole mounting. Key electrical parameters include a gate charge (Qg) of 44 nC at 10V and input capacitance (Ciss) of 2000 pF at 50V. The AOI482 is suitable for use in various industrial sectors requiring efficient power management solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 50 V |
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