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AOI472A

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AOI472A

MOSFET N-CH 25V 18A/46A TO251A

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOI472A is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 25V drain-source breakdown voltage and offers a continuous drain current rating of 18A at 25°C ambient and 46A at 25°C case temperature. The low on-resistance (Rds On) of 5mOhm at 20A and 10V Vgs ensures minimal conduction losses. With a maximum power dissipation of 50W (Tc), it is suitable for demanding thermal environments. Key electrical characteristics include a gate charge (Qg) of 33 nC and input capacitance (Ciss) of 1333 pF. The AOI472A is housed in a TO-251A (IPAK) package with through-hole mounting. This MOSFET is utilized in industries such as automotive, industrial power supplies, and consumer electronics where robust power switching is critical. It operates across a temperature range of -55°C to 175°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageTO-251A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1333 pF @ 15 V

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