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AOI452A

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AOI452A

MOSFET N-CH 25V 55A TO251A

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOI452A is an N-Channel Power MOSFET from the SDMOS™ series, packaged in a TO-251A (IPAK) through-hole configuration. This device offers a continuous drain current of 55A at 25°C (Tc) and a drain-source breakdown voltage of 25V. With a maximum on-resistance of 7.3mOhm at 20A and 10V gate-source voltage, it features low conduction losses. The AOI452A is suitable for applications requiring high current density and efficient switching, commonly found in power management, automotive, and industrial control systems. Its operating temperature range is -55°C to 175°C (TJ), with a maximum power dissipation of 50W at 25°C (Tc). Key electrical parameters include a gate charge (Qg) of 26 nC (max) at 10V and input capacitance (Ciss) of 1450 pF (max) at 12.5V.

Additional Information

Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs7.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-251A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 12.5 V

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