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AOI423

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AOI423

MOSFET P-CH 30V 15A/70A TO251A

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOI423 is a P-Channel MOSFET designed for power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 15A at 25°C ambient temperature, increasing to 70A at 25°C case temperature. The Rds On is specified at a maximum of 6.7mOhm at 20A and 20V gate drive. Key parameters include a Gate Charge (Qg) of 65 nC at 10V and Input Capacitance (Ciss) of 2760 pF at 15V. The AOI423 offers a maximum power dissipation of 2.5W (Ta) and 90W (Tc). It is housed in a TO-251A package with through-hole mounting and operates across a temperature range of -55°C to 175°C. This device is suitable for use in industries such as automotive and industrial power control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs6.7mOhm @ 20A, 20V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackageTO-251A
Drive Voltage (Max Rds On, Min Rds On)10V, 20V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2760 pF @ 15 V

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