AOI418
MOSFET N-CH 30V 13.5A/36A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI418 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current capability of 13.5A at ambient temperature (Ta) and 36A at case temperature (Tc). With a maximum on-resistance (Rds On) of 8mOhm at 20A and 10V Vgs, it ensures efficient power transfer. The AOI418 supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key parameters include a maximum gate charge (Qg) of 24 nC and input capacitance (Ciss) of 1380 pF. Power dissipation is rated at 2.5W (Ta) and 50W (Tc). Packaged in a TO-251A (IPAK) through-hole configuration, it operates across a temperature range of -55°C to 175°C. This device is suitable for use in power management, automotive, and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 15 V |
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