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AOI4130

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AOI4130

MOSFET N-CH 60V 6.5A/30A TO251A

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOI4130 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 60V. This component features a continuous drain current capability of 6.5A at ambient temperature (Ta) and 30A at case temperature (Tc). The maximum power dissipation is rated at 2.5W (Ta) and 52W (Tc). With a maximum Rds(On) of 24mOhm at 20A and 10V, it offers efficient switching. The TO-251A package with through-hole mounting is suitable for applications requiring robust thermal performance. Key parameters include a gate charge (Qg) of 34 nC @ 10V and an input capacitance (Ciss) of 1900 pF @ 30V. The device operates over a temperature range of -55°C to 175°C. This MOSFET is commonly utilized in power supply units, motor control, and battery management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs24mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id2.8V @ 250µA
Supplier Device PackageTO-251A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 30 V

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