AOI4102
MOSFET N-CH 30V 8A/19A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI4102 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This TO-251A packaged device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8A at ambient temperature (Ta) and 19A at case temperature (Tc). With a maximum Rds(on) of 37.5mOhm at 12A and 10V Vgs, it offers low conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V and a gate threshold voltage (Vgs(th)) of 3V at 250µA. Key parameters include a maximum gate charge (Qg) of 8nC at 10V and input capacitance (Ciss) of 432pF at 15V Vds. Power dissipation is rated at 4.2W (Ta) and 21W (Tc). This MOSFET is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 37.5mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.2W (Ta), 21W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 432 pF @ 15 V |
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