AOI2N60A
MOSFET N-CH 600V 2A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI2N60A is an N-Channel Power MOSFET designed for high voltage applications. This TO-251A packaged device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 2A at 25°C, with a maximum power dissipation of 57W (Tc). The Rds(on) is specified at 4.7 Ohms maximum at 1A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 11 nC and Input Capacitance (Ciss) of 295 pF, both measured under specified conditions. This component is suitable for use in industrial power supplies and lighting control applications. The device operates across a temperature range of -50°C to 150°C (TJ) and is supplied in a Tube package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V |
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