AOI2N60
MOSFET N-CH 600V 2A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI2N60 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 2 A at 25°C. The device offers a maximum on-resistance (Rds On) of 4.4 Ohm at 1 A, 10 V. Key parameters include a gate charge (Qg) of 11 nC and input capacitance (Ciss) of 325 pF, both specified at 10 V and 25 V respectively. With a maximum power dissipation of 56.8 W at 25°C (Tc), the AOI2N60 is suitable for use in power supplies, lighting, and industrial motor control applications. It is packaged in a TO-251A (IPAK) through-hole configuration.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V |
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