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AOI296A

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AOI296A

MOSFET N-CH 100V 70A TO251A

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOI296A is an N-Channel MOSFET in a TO-251A package. This device features a maximum drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 70 A at 25°C (Tc). The on-resistance (Rds On) is specified at 8.3 mOhm maximum at 20 A and 10 V gate drive. With a gate charge (Qg) of 60 nC maximum at 10 V and input capacitance (Ciss) of 3130 pF maximum at 50 V, this component is designed for power switching applications. Its maximum power dissipation is 89 W at 25°C (Tc). The AOI296A is suitable for use in industrial and consumer electronics sectors. It operates over an extended temperature range of -55°C to 150°C (TJ) and has a gate-source voltage (Vgs) tolerance up to ±20 V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs8.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)89W (Tc)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device PackageTO-251A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3130 pF @ 50 V

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