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AOI294A

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AOI294A

MOSFET N-CH 100V 55A TO251A

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOI294A is an N-Channel AlphaSGT™ MOSFET designed for power management applications. This device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 55 A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 12 mOhm at 20 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 50 nC at 10 V and an input capacitance (Ciss) of 2305 pF at 50 V. The device supports gate drive voltages from 4.5 V to 10 V with a maximum gate-source voltage of ±20 V. The AOI294A has a maximum power dissipation of 73 W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-251A (IPAK) for through-hole mounting, this MOSFET is suitable for use in industrial and automotive sectors.

Additional Information

Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C55A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)73W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-251A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2305 pF @ 50 V

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