AOI2610
MOSFET N-CH 60V 10A/46A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI2610 is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 10A at a temperature of 25°C (ambient) and 46A at 25°C (case). The device offers a low on-resistance (Rds On) of 10.7mOhm at 20A and 10V gate-source voltage. Its TO-251A (IPAK) package facilitates through-hole mounting. Key electrical characteristics include a maximum gate charge (Qg) of 30 nC at 10V and a maximum input capacitance (Ciss) of 2007 pF at 30V. Power dissipation capabilities are 2.5W (ambient) and 71.5W (case). The AOI2610 is suitable for use in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 71.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2007 pF @ 30 V |
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