AOI2606
MOSFET N-CH 60V 14A/46A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI2606 is an N-Channel Power MOSFET designed for demanding applications. This device offers a Vds of 60V and features a low Rds(on) of 6.8mOhm at 20A and 10V Vgs. The continuous drain current is rated at 14A (Ta) and 46A (Tc), with a maximum power dissipation of 2.5W (Ta) and 150W (Tc). Key parameters include a gate charge (Qg) of 75 nC at 10V and input capacitance (Ciss) of 4050 pF at 30V Vds. Packaged in a TO-251A (IPAK) through-hole configuration, it operates across a temperature range of -55°C to 175°C. This component is suitable for power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4050 pF @ 30 V |
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