AOI2210
MOSFET N-CH 200V 3A/18A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOI2210 is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and offers a continuous drain current capability of 3A at ambient temperature (Ta) and 18A at case temperature (Tc). With a maximum power dissipation of 2.5W (Ta) and 100W (Tc), it is suitable for power management tasks. The AOI2210 exhibits a low on-resistance (Rds On) of 105mOhm at 18A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 2065 pF at 100V. This through-hole mounted device is packaged in a TO-251A (IPAK) configuration. It finds application in power supplies, motor control, and lighting solutions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2065 pF @ 100 V |
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