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AOI208

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AOI208

MOSFET N-CH 30V 18A/54A TO251A

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOI208 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 30V and offers a continuous drain current of 18A at ambient temperature (Ta) and 54A at case temperature (Tc). The AOI208 exhibits a low on-resistance (Rds On) of 5.1mOhm at 20A and 10V Vgs, with a gate charge (Qg) of 33 nC at 10V. It supports a gate-source voltage (Vgs) range of ±20V, with a threshold voltage (Vgs(th)) of 2.3V at 250µA. The device is housed in a TO-251A (IPAK) package and supports through-hole mounting. Power dissipation is rated at 2.5W (Ta) and 62W (Tc). This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors, particularly in power management and motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Stub Leads, IPAK
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs5.1mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id2.3V @ 250µA
Supplier Device PackageTO-251A
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 15 V

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