AOI1R4A70
MOSFET N-CH 700V 3.8A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ N-Channel MOSFET, part number AOI1R4A70, offers a 700V breakdown voltage with a continuous drain current of 3.8A at 25°C. This TO-251A packaged device features a maximum on-resistance of 1.4 Ohms at 1A and 10V gate drive. With a gate charge of 8 nC and input capacitance of 354 pF, it is suitable for power supply applications, industrial automation, and renewable energy systems. The device operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 48W.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 354 pF @ 100 V |
Request a Quote
Clients Also Buy
AOB27S60L
MOSFET N-CH 600V 27A TO263
AOD4S60
MOSFET N-CH 600V 4A TO252
AOTF15S60L
MOSFET N-CH 600V 15A TO220-3F
