AOI1N60L
MOSFET N-CH 600V 1.3A TO251AManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOI1N60L is an N-Channel power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 1.3A at 25°C, with a maximum power dissipation of 45W (Tc). The RDS(on) is specified at a maximum of 9Ohm at 650mA, 10V. The TO-251A package facilitates through-hole mounting. Key parameters include a Gate Charge (Qg) of 8 nC @ 10V and Input Capacitance (Ciss) of 160 pF @ 25V. The AOI1N60L is suitable for use in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 650mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
Request a Quote
Clients Also Buy
AO4266
MOSFET N-CH 60V 10A 8SO
AONV070V65G1
GAN
AOL1432
MOSFET N-CH 25V 12A/44A ULTRASO8
