AOH3110
MOSFET N-CH 100V 1A SOT223Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AOH3110, an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 1A at 25°C. The AOH3110 exhibits a maximum on-resistance (Rds On) of 700mOhm at 900mA and 10V gate-source voltage. With a gate charge (Qg) of 6 nC at 10V and input capacitance (Ciss) of 100 pF at 50V, it is well-suited for various power management tasks. The device operates within a temperature range of -55°C to 150°C and supports drive voltages from 4.5V to 10V. The AOH3110 is supplied in a SOT-223-4 (TO-261-4) surface-mount package, delivered on tape and reel for automated assembly. This MOSFET finds application in areas such as consumer electronics and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.9V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 50 V |
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