Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

AOD9T40P

Banner
productimage

AOD9T40P

MOSFET N-CH 400V 6.6A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOD9T40P is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 400 V and a continuous drain current (Id) of 6.6 A at 25°C, with a maximum power dissipation of 83 W (Tc). The AOD9T40P exhibits a maximum on-resistance (Rds On) of 800 mOhm at 4 A and 10 V gate drive. Key specifications include a gate charge (Qg) of 18 nC and input capacitance (Ciss) of 530 pF. It is housed in a TO-252 (DPAK) surface-mount package and operates across a temperature range of -55°C to 150°C. This component is suitable for use in power supply, lighting, and industrial motor control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.6A (Tc)
Rds On (Max) @ Id, Vgs800mOhm @ 4A, 10V
FET Feature-
Power Dissipation (Max)83W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds530 pF @ 100 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
AONV110A60

N

product image
AOK065A60FD

LINEAR IC

product image
AOSP66406

N