AOD7S65
MOSFET N-CH 650V 7A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET, part number AOD7S65, offers a 650V drain-to-source voltage and 7A continuous drain current at 25°C. This surface mount device, packaged in a TO-252 (DPAK), dissipates up to 89W at 25°C. Key parameters include a maximum Rds On of 650mOhm at 3.5A and 10V Vgs, with a gate charge of 9.2 nC at 10V. Input capacitance (Ciss) is rated at 434pF at 100V. The device operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power conversion and high voltage switching, commonly found in industrial and consumer electronics.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 434 pF @ 100 V |
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