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AOD7S60

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AOD7S60

MOSFET N-CH 600V 7A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. aMOS™ N-Channel MOSFET, part number AOD7S60, is a 600V, 7A device in a TO-252 (DPAK) surface mount package. This FET offers a maximum continuous drain current of 7A at 25°C with a power dissipation of 83W. Key parameters include a drain-to-source voltage (Vdss) of 600V, a maximum Rds(on) of 600mOhm at 3.5A and 10V Vgs, and a gate charge of 8.2nC at 10V. Ciss is rated at 372pF maximum at 100V. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in power supply, lighting, and industrial motor control.

Additional Information

Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)83W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds372 pF @ 100 V

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