AOD7N60
MOSFET N-CH 600V 7A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AOD7N60, a high-performance N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 7A at 25°C, with a maximum power dissipation of 178W (Tc). The device offers a low on-resistance (Rds On) of 1.3 Ohm maximum at 3.5A and 10V gate drive. Key characteristics include a gate charge (Qg) of 24 nC maximum at 10V and an input capacitance (Ciss) of 1170 pF maximum at 25V. The AOD7N60 is housed in a TO-252 (DPAK) surface-mount package, suitable for efficient thermal management. This MOSFET is widely utilized in power supply units, industrial automation, and lighting control systems. It operates across a temperature range of -50°C to 150°C (TJ) and is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1170 pF @ 25 V |
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