AOD6N50
MOSFET N-CH 500V 5.3A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOD6N50 is an N-Channel MOSFET with a drain-source breakdown voltage (Vds) of 500 V. This device is designed for surface mounting in a TO-252 (DPAK) package. It offers a continuous drain current (Id) of 5.3 A at 25°C and a maximum power dissipation of 104 W (Tc). The on-resistance (Rds On) is rated at 1.4 Ohm maximum at 2.5 A and 10 V gate drive. Key characteristics include a gate charge (Qg) of 14 nC at 10 V and input capacitance (Ciss) of 670 pF at 25 V. The operating junction temperature range is -50°C to 150°C. This component is suitable for applications in power supply units and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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