AOD5N50M
MOSFET N-CH 500V 5A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOD5N50M is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 5A at 25°C. The device offers a maximum on-resistance (Rds On) of 1.6 Ohm at 2.5A and 10V gate drive. With a power dissipation capability of 104W (Tc), it is suitable for demanding power conversion circuits. The AOD5N50M is packaged in a TO-252 (DPAK) surface mount configuration, ideal for automated assembly. Key electrical characteristics include a gate charge (Qg) of 14 nC at 10V and an input capacitance (Ciss) of 670 pF at 25V. This component is utilized in various industrial sectors, including power supplies, LED lighting, and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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